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افکاری الکترونیک صنعتی
MOSFET
600V CoolMOSª P7 Power Device
The CoolMOS™ 7th generation platform is a revolutionary technology for
high voltage power MOSFETs, designed according to the superjunction
(SJ) principle and pioneered by Infineon Technologies. The 600V
CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It
combines the benefits of a fast switching SJ MOSFET with excellent ease
of use, e.g. very low ringing tendency, outstanding robustness of body
diode against hard commutation and excellent ESD capability.
Furthermore, extremely low switching and conduction losses make
switching applications even more efficient, more compact and much
cooler.
Features
• Suitable for hard and soft switching (PFC and LLC) due to an outstanding
commutation ruggedness
• Significant reduction of switching and conduction losses
• Excellent ESD robustness >2kV (HBM) for all products
• Better RDS(on)/package products compared to competition enabled by a
low RDS(on)*A (below 1Ohm*mm²)
Parameter Value Unit
VDS @ Tj,max 650 V
RDS(on),max 60 mW
Qg,typ 67 nC
ID,pulse 151 A
Eoss @ 400V 7.1 μJ
Body diode diF/dt 900 A/μs
آدرس فروشگاه
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